METHOD OF MANUFACTURING SEMICONDUCTOR WAFERS
A manufacturing method of semiconductor wafers includes preparing a ingot (20) having a first major surface (21) and a second major surface (22) in a back side of the first major surface, a peeling layer (23) being formed in the ingot along the first major surface; and applying a load to the ingot f...
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| creator | SOLTANI, Bahman NOMURA, Sodai KAWAZU, Tomoki NUNOME, Nobuyuki ISSHIKI, Yutaro ONISHI, Riku OKITA, Shiro |
| description | A manufacturing method of semiconductor wafers includes preparing a ingot (20) having a first major surface (21) and a second major surface (22) in a back side of the first major surface, a peeling layer (23) being formed in the ingot along the first major surface; and applying a load to the ingot from outside thereof with respect to a surface direction along the first major surface such that a moment with a supporting point (PP) which is a first end of the ingot in the surface direction acts on the ingot, thereby peeling a wafer precursor (24) from the ingot. Also, a dynamic force may be applied to the ingot such that a tensile stress along an ingot thickness direction acts on an entire area of the ingot in the surface direction, thereby peeling the wafer precursor (24) from the ingot. |
| format | Patent |
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Also, a dynamic force may be applied to the ingot such that a tensile stress along an ingot thickness direction acts on an entire area of the ingot in the surface direction, thereby peeling the wafer precursor (24) from the ingot.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | PERFORMING OPERATIONS TRANSPORTING WORKING CEMENT, CLAY, OR STONE WORKING STONE OR STONE-LIKE MATERIALS |
| title | METHOD OF MANUFACTURING SEMICONDUCTOR WAFERS |
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