METHOD OF MANUFACTURING SEMICONDUCTOR WAFERS

A manufacturing method of semiconductor wafers includes preparing a ingot (20) having a first major surface (21) and a second major surface (22) in a back side of the first major surface, a peeling layer (23) being formed in the ingot along the first major surface; and applying a load to the ingot from outside thereof with respect to a surface direction along the first major surface such that a moment with a supporting point (PP) which is a first end of the ingot in the surface direction acts on the ingot, thereby peeling a wafer precursor (24) from the ingot. Also, a dynamic force may be applied to the ingot such that a tensile stress along an ingot thickness direction acts on an entire area of the ingot in the surface direction, thereby peeling the wafer precursor (24) from the ingot.