METHOD TO CREATE FUNCTIONAL COATINGS ON MAGNESIUM

In example implementations, a method for producing a coating is provided. The method includes placing a magnesium substrate into an anodizing bath, applying a voltage for a first amount of time to form a micro-porous anodizing layer having a thickness of between 1 to 50 microns on the magnesium subs...

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Bibliographische Detailangaben
Hauptverfasser:	GOODE, Christopher William, HOU, Fengyan
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING OR DEGREASING OF METALLIC MATERIAL BY CHEMICALMETHODS OTHER THAN ELECTROLYSIS COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	In example implementations, a method for producing a coating is provided. The method includes placing a magnesium substrate into an anodizing bath, applying a voltage for a first amount of time to form a micro-porous anodizing layer having a thickness of between 1 to 50 microns on the magnesium substrate, placing the magnesium substrate with the micro-porous anodizing layer in plating bath, wherein the plating bath comprises a metal and a complexing agent with a pH between 8 and 14, applying a first current to the plating bath for a second amount of time to form an interlock layer on the micro-porous anodizing layer, and applying a second current to the plating bath for a third amount of time to form a coating on the interlock layer.