BULK ACOUSTIC WAVE RESONATOR

A film bulk acoustic wave resonator (BAWR) comprises a bulk acoustic wave resonance unit (110) comprising a first electrode (115), a second electrode (111), and a piezoelectric layer (113) disposed between the first electrode and the second electrode; an air gap (140) disposed below the resonance un...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SHIN, Jea Shik, KIM, Chul Soo, KIM, Duck Hwan, SON, Sang Uk, LEE, Moon Chul, SONG, In Sang
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator SHIN, Jea Shik
KIM, Chul Soo
KIM, Duck Hwan
SON, Sang Uk
LEE, Moon Chul
SONG, In Sang
description A film bulk acoustic wave resonator (BAWR) comprises a bulk acoustic wave resonance unit (110) comprising a first electrode (115), a second electrode (111), and a piezoelectric layer (113) disposed between the first electrode and the second electrode; an air gap (140) disposed below the resonance unit; and an air edge (120, 130) formed at a distance from a center of the bulk acoustic wave resonance unit, wherein the air edge is formed in the vertical direction, and wherein the air gap is configured to reflect acoustic waves of the resonance unit in a vertical direction and the air edge is configured to reflect acoustic waves of the resonance unit in a horizontal direction.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP4138300A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP4138300A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP4138300A13</originalsourceid><addsrcrecordid>eNrjZJBxCvXxVnB09g8NDvF0Vgh3DHNVCHIN9vdzDPEP4mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8a4BJobGFsYGBo6GxkQoAQA4HyBq</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>BULK ACOUSTIC WAVE RESONATOR</title><source>esp@cenet</source><creator>SHIN, Jea Shik ; KIM, Chul Soo ; KIM, Duck Hwan ; SON, Sang Uk ; LEE, Moon Chul ; SONG, In Sang</creator><creatorcontrib>SHIN, Jea Shik ; KIM, Chul Soo ; KIM, Duck Hwan ; SON, Sang Uk ; LEE, Moon Chul ; SONG, In Sang</creatorcontrib><description>A film bulk acoustic wave resonator (BAWR) comprises a bulk acoustic wave resonance unit (110) comprising a first electrode (115), a second electrode (111), and a piezoelectric layer (113) disposed between the first electrode and the second electrode; an air gap (140) disposed below the resonance unit; and an air edge (120, 130) formed at a distance from a center of the bulk acoustic wave resonance unit, wherein the air edge is formed in the vertical direction, and wherein the air gap is configured to reflect acoustic waves of the resonance unit in a vertical direction and the air edge is configured to reflect acoustic waves of the resonance unit in a horizontal direction.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRONIC CIRCUITRY ; ELECTRICITY ; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS ; RESONATORS</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230222&amp;DB=EPODOC&amp;CC=EP&amp;NR=4138300A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230222&amp;DB=EPODOC&amp;CC=EP&amp;NR=4138300A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHIN, Jea Shik</creatorcontrib><creatorcontrib>KIM, Chul Soo</creatorcontrib><creatorcontrib>KIM, Duck Hwan</creatorcontrib><creatorcontrib>SON, Sang Uk</creatorcontrib><creatorcontrib>LEE, Moon Chul</creatorcontrib><creatorcontrib>SONG, In Sang</creatorcontrib><title>BULK ACOUSTIC WAVE RESONATOR</title><description>A film bulk acoustic wave resonator (BAWR) comprises a bulk acoustic wave resonance unit (110) comprising a first electrode (115), a second electrode (111), and a piezoelectric layer (113) disposed between the first electrode and the second electrode; an air gap (140) disposed below the resonance unit; and an air edge (120, 130) formed at a distance from a center of the bulk acoustic wave resonance unit, wherein the air edge is formed in the vertical direction, and wherein the air gap is configured to reflect acoustic waves of the resonance unit in a vertical direction and the air edge is configured to reflect acoustic waves of the resonance unit in a horizontal direction.</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRICITY</subject><subject>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</subject><subject>RESONATORS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJBxCvXxVnB09g8NDvF0Vgh3DHNVCHIN9vdzDPEP4mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8a4BJobGFsYGBo6GxkQoAQA4HyBq</recordid><startdate>20230222</startdate><enddate>20230222</enddate><creator>SHIN, Jea Shik</creator><creator>KIM, Chul Soo</creator><creator>KIM, Duck Hwan</creator><creator>SON, Sang Uk</creator><creator>LEE, Moon Chul</creator><creator>SONG, In Sang</creator><scope>EVB</scope></search><sort><creationdate>20230222</creationdate><title>BULK ACOUSTIC WAVE RESONATOR</title><author>SHIN, Jea Shik ; KIM, Chul Soo ; KIM, Duck Hwan ; SON, Sang Uk ; LEE, Moon Chul ; SONG, In Sang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP4138300A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2023</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRICITY</topic><topic>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</topic><topic>RESONATORS</topic><toplevel>online_resources</toplevel><creatorcontrib>SHIN, Jea Shik</creatorcontrib><creatorcontrib>KIM, Chul Soo</creatorcontrib><creatorcontrib>KIM, Duck Hwan</creatorcontrib><creatorcontrib>SON, Sang Uk</creatorcontrib><creatorcontrib>LEE, Moon Chul</creatorcontrib><creatorcontrib>SONG, In Sang</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHIN, Jea Shik</au><au>KIM, Chul Soo</au><au>KIM, Duck Hwan</au><au>SON, Sang Uk</au><au>LEE, Moon Chul</au><au>SONG, In Sang</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>BULK ACOUSTIC WAVE RESONATOR</title><date>2023-02-22</date><risdate>2023</risdate><abstract>A film bulk acoustic wave resonator (BAWR) comprises a bulk acoustic wave resonance unit (110) comprising a first electrode (115), a second electrode (111), and a piezoelectric layer (113) disposed between the first electrode and the second electrode; an air gap (140) disposed below the resonance unit; and an air edge (120, 130) formed at a distance from a center of the bulk acoustic wave resonance unit, wherein the air edge is formed in the vertical direction, and wherein the air gap is configured to reflect acoustic waves of the resonance unit in a vertical direction and the air edge is configured to reflect acoustic waves of the resonance unit in a horizontal direction.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre ; ger
recordid cdi_epo_espacenet_EP4138300A1
source esp@cenet
subjects BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
title BULK ACOUSTIC WAVE RESONATOR
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T23%3A31%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SHIN,%20Jea%20Shik&rft.date=2023-02-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP4138300A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true