AG ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

There is provided an Ag alloy bonding wire for semiconductor devices which exhibits a favorable bond reliability in a high-temperature environment even when using a mold resin of high S content and can suppress a chip damage at the time of ball bonding. The Ag alloy bonding wire is characterized by containing at least one element selected from the group consisting of Pd and Pt (hereinafter referred to as a "first element") and at least one element selected from the group consisting of P, Cr, Zr and Mo (hereinafter referred to as a "second element") so as to satisfy 0.05≤x1≤3.0, and 15≤x2≤700 where x1 is a total concentration of the first element [at.%] and x2 is a total concentration of the second element [at. ppm],with the balance including Ag.