SEMICONDUCTOR DEVICE FOR POWER AMPLIFICATION

A semiconductor device for power amplification (11) includes: a source electrode (204), a drain electrode (205), and a gate electrode (206) disposed above a semiconductor stack structure (220) including a first nitride semiconductor layer (201) and a second nitride semiconductor layer (202); and a s...

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Bibliographische Detailangaben
Hauptverfasser:	MIYAJIMA, Kenichi, KAWASHIMA, Katsuhiko, KANDA, Yusuke
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A semiconductor device for power amplification (11) includes: a source electrode (204), a drain electrode (205), and a gate electrode (206) disposed above a semiconductor stack structure (220) including a first nitride semiconductor layer (201) and a second nitride semiconductor layer (202); and a source field plate (209) that is disposed above the semiconductor stack structure (220) between the gate electrode (206) and the drain electrode (205), and has a same potential as a potential of the source electrode (204). The source field plate (209) has a staircase shape, and even when length LF2 of an upper section is increased for electric field relaxation, an increase in parasitic capacitance Cds generated between the source field plate (209) and a 2DEG surface (230) is inhibited.