PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

The invention relates to an interdigitated back contact (IBC) photovoltaic device (1), comprising:a silicon-based substrate (3), an intrinsic amorphous silicon layer a-Si:H(i) (5) situated on substrate (3) a first patterned silicon layer (2), and a second patterned nano-crystalline silicon layer (4) on the first patterned silicon layer (2). The second patterned layer (4) is of the same type of doping than said first patterned silicon layer (2) The first patterned layer (2) and the second patterned layer (4) form photovoltaic structures (12a, 12g), of which at least one constitutes a fiducial mark (10) having, in a predetermined wavelength range, a different optical reflectivity (R1), than the reflectivity (R0) of the intrinsic amorphous silicon (a-Si:H(i)) layer portions interstices (5a-5f) between said photovoltaic structures (12a, 12g).The invention relates also to a solar cell comprising said photovoltaic device (1), and to a method of fabrication of said photovoltaic device.