A SEMICONDUCTOR POWER MODULE WITH TWO DIFFERENT POTTING MATERIALS AND A METHOD FOR FABRICATING THE SAME

A semiconductor power module (10) comprises an insulating interposer (1) comprising an insulative layer (1A) disposed between a lower metal layer, a first upper metal layer (1B) and a second upper metal layer (1C), a semiconductor transistor die (2) disposed on the first upper metal layer (1B), an electrical connector (3) connecting the semiconductor transistor die (2) with the second upper metal layer (1C), a housing (4) enclosing the insulating interposer (1) and the semiconductor transistor die (2), a first potting material (5) covering at least selective portions of the semiconductor transistor die (2) and the electrical connector (3); and a second potting material (6) applied onto the first potting material (5), wherein the first and second potting materials (5, 6) are different from each other.