METHOD OF CROSS-SECTION IMAGING OF AN INSPECTION VOLUMES IN WAFER

The present disclosure relates to dual beam device and three-dimensional circuit pattern inspection techniques by cross sectioning of inspection volumes with large depth extension exceeding 1 μm below the surface of a semiconductor wafer, as well as methods, computer program products and apparatuses...

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Bibliographische Detailangaben
Hauptverfasser:	KORB, Thomas, NEUMANN, Jens Timo, KLOCHKOV, Dmitry, BUXBAUM, Alex, FOCA, Eugen, HUYNH, Chuong, NIU, Baohua
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY
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Beschreibung
Zusammenfassung:	The present disclosure relates to dual beam device and three-dimensional circuit pattern inspection techniques by cross sectioning of inspection volumes with large depth extension exceeding 1 μm below the surface of a semiconductor wafer, as well as methods, computer program products and apparatuses for generating 3D volume image data of a deep inspection volume inside a wafer without removal of a sample from the wafer. The disclosure further relates to 3D volume image generation and cross section image alignment methods utilizing a dual beam device for three-dimensional circuit pattern inspection.