QUARTZ GLASS CRUCIBLE FOR PRODUCING SILICON CRYSTALS AND PROCESS FOR PRODUCING QUARTZ GLASS CRUCIBLE

A fused quartz crucible for pulling a single crystal of silicon by the Czochralski technique, has an inner side with an inner layer of fused quartz that forms a surface, the inner layer being provided with a crystallization promoter which on heating of the fused quartz crucible during use, in crysta...

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Bibliographische Detailangaben
Hauptverfasser:	ZEMKE, Dirk, LEHMANN, Toni
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY CRYSTAL GROWTH GLASS JOINING GLASS TO GLASS OR OTHER MATERIALS MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES METALLURGY MINERAL OR SLAG WOOL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A fused quartz crucible for pulling a single crystal of silicon by the Czochralski technique, has an inner side with an inner layer of fused quartz that forms a surface, the inner layer being provided with a crystallization promoter which on heating of the fused quartz crucible during use, in crystal pulling, causes crystallization of fused quartz to form b-cristobalite, wherein the concentration C of synthetically obtained SiO2 at a distance d from the surface is greater than the concentration of synthetically obtained SiO2 at a distance d2 from the surface, where d2 is greater than d. Multiple crystals can be grown while maintaining high crystal quality.