SEMICONDUCTOR DEVICE
In semiconductor device, a field plate portion having a high concentration p-type semiconductor region, a low concentration p-type semiconductor region having a lower impurity concentration than the high concentration p-type semiconductor region and a high concentration n-type semiconductor region i...
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| Hauptverfasser: | , |
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | In semiconductor device, a field plate portion having a high concentration p-type semiconductor region, a low concentration p-type semiconductor region having a lower impurity concentration than the high concentration p-type semiconductor region and a high concentration n-type semiconductor region is provided. Then, the high concentration p-type semiconductor region is electrically connected to the source region while the high concentration n-type semiconductor region is electrically connected to the drain region. |
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