PHOTODETECTION DEVICE WITH A LATERAL CONCENTRATION GRADIENT OF CADMIUM IN THE SPACE CHARGE REGION

Photo-detection device (100) including a semiconductor substrate (110) made of CdxHg1-xTe, with an N-doped region (120), a P-doped region (130), and a concentrated casing (150) only located in the P-doped region and having an average cadmium concentration greater than the average cadmium concentrati...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ROCHETTE, Florent, LOBRE, Clément
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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