PHOTODETECTION DEVICE WITH A LATERAL CONCENTRATION GRADIENT OF CADMIUM IN THE SPACE CHARGE REGION

PHOTODETECTION DEVICE WITH A LATERAL CONCENTRATION GRADIENT OF CADMIUM IN THE SPACE CHARGE REGION

Photo-detection device (100) including a semiconductor substrate (110) made of CdxHg1-xTe, with an N-doped region (120), a P-doped region (130), and a concentrated casing (150) only located in the P-doped region and having an average cadmium concentration greater than the average cadmium concentrati...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ROCHETTE, Florent, LOBRE, Clément
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Photo-detection device (100) including a semiconductor substrate (110) made of CdxHg1-xTe, with an N-doped region (120), a P-doped region (130), and a concentrated casing (150) only located in the P-doped region and having an average cadmium concentration greater than the average cadmium concentration in the N-doped region.According to the invention, the concentrated casing (150) has a cadmium concentration gradient, defining therein at least one intermediate gap zone (151) and at least one high gap zone (152), and the intermediate gap zone (151) is in direct physical contact with an electrical contact block (170).A significant reduction in the dark current and an optimal charge carrier collection are thus combined.