PHOTODETECTION DEVICE WITH A LATERAL CONCENTRATION GRADIENT OF CADMIUM IN THE SPACE CHARGE REGION

PHOTODETECTION DEVICE WITH A LATERAL CONCENTRATION GRADIENT OF CADMIUM IN THE SPACE CHARGE REGION

Photo-detection device (100) including a semiconductor substrate (110) made of CdxHg1-xTe, with an N-doped region (120), a P-doped region (130), and a concentrated casing (150) only located in the P-doped region and having an average cadmium concentration greater than the average cadmium concentrati...

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Hauptverfasser: ROCHETTE, Florent, LOBRE, Clément
Format: Patent
Sprache:eng ; fre ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator ROCHETTE, Florent
LOBRE, Clément
description Photo-detection device (100) including a semiconductor substrate (110) made of CdxHg1-xTe, with an N-doped region (120), a P-doped region (130), and a concentrated casing (150) only located in the P-doped region and having an average cadmium concentration greater than the average cadmium concentration in the N-doped region.According to the invention, the concentrated casing (150) has a cadmium concentration gradient, defining therein at least one intermediate gap zone (151) and at least one high gap zone (152), and the intermediate gap zone (151) is in direct physical contact with an electrical contact block (170).A significant reduction in the dark current and an optimal charge carrier collection are thus combined.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PHOTODETECTION DEVICE WITH A LATERAL CONCENTRATION GRADIENT OF CADMIUM IN THE SPACE CHARGE REGION
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