MEMORY READ CIRCUITRY WITH A FLIPPED VOLTAGE FOLLOWER

MEMORY READ CIRCUITRY WITH A FLIPPED VOLTAGE FOLLOWER

A memory includes read circuitry for reading values stored in memory cells. The read circuitry includes flipped voltage followers for providing bias voltages to nodes of current paths coupled to sense amplifiers during memory read operations.

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Bibliographische Detailangaben
Hauptverfasser: RAMANAN, Karthik, SANJEEVARAO, Padmaraj, CHOY, Jon Scott
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:A memory includes read circuitry for reading values stored in memory cells. The read circuitry includes flipped voltage followers for providing bias voltages to nodes of current paths coupled to sense amplifiers during memory read operations.