SEMICONDUCTOR DEVICE WITH CONDUCTIVE ELEMENT FORMED OVER DIELECTRIC LAYERS AND METHOD OF FABRICATION THEREFOR

An embodiment of a semiconductor device includes a semiconductor substrate (110), a first current-carrying electrode (140), and a second current-carrying electrode (145) formed over the semiconductor, a control electrode (150) formed over the semiconductor substrate between the first current carrying electrode and the second current carrying electrode, and a first dielectric layer (160) disposed over the control electrode, and a second dielectric layer (170) disposed over the first dielectric layer. A first opening is formed in the second dielectric layer, adjacent the control electrode and the second current-carrying electrode, having a first edge laterally adjacent to and nearer the second current-carrying electrode, and a second edge laterally adjacent to and nearer to the control electrode, and a conductive element (180) formed over the first dielectric layer and within the first opening, wherein the portion of the conductive element formed within the first opening forms a first metal-insulator-semiconductor region (187) within the first opening.