CURABLE FORMULATIONS FOR FORMING LOW-K DIELECTRIC SILICON-CONTAINING FILMS USING POLYCARBOSILAZANE

Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two -SiH2- moieties, either as terminal groups (-SiH3R) or embedded in a ca...

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Bibliographische Detailangaben
Hauptverfasser: GIRARD, Jean-Marc, LARRABEE, Thomas, J, QIN, Fan, ZHANG, Peng, ITOV, Gennadiy, LIU, Yumin, MARCHEGIANI, Fabrizio
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two -SiH2- moieties, either as terminal groups (-SiH3R) or embedded in a carbosilane cyclic compound, wherein R is H, a C1-C6 linear, branched, or cyclic alkyl- group, a C1-C6 linear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.