SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR

The disclosure relates to the semiconductor technical field. A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a substrate, an isolation structure formed in the substrate, and a word line including a first convex portion and a second convex portion. The first convex portion and the second convex portion are located in the isolation structure, and a depth of the first convex portion is greater than a depth of the second convex portion. The first convex portion has a deeper depth, which can enhance the control ability of the word line to the transistor channel, thereby improving the leakage current.