ULTRA-LOW TEMPERATURE ALD TO FORM HIGH-QUALITY SI-CONTAINING FILM

ULTRA-LOW TEMPERATURE ALD TO FORM HIGH-QUALITY SI-CONTAINING FILM

Disclosed is a method for forming Si-containing films, such as SiN film, by PEALD using trisilylamine (TSA) at ultralow temperature, such as a temperature below 250° C.

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Bibliographische Detailangaben
Hauptverfasser: GIRARD, Jean-Marc, OSHCHEPKOV, Ivan, NODA, Naoto
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Disclosed is a method for forming Si-containing films, such as SiN film, by PEALD using trisilylamine (TSA) at ultralow temperature, such as a temperature below 250° C.