AREA SELECTIVE DEPOSITION OF METAL CONTAINING FILMS

Processes of selectively depositing a metal-containing film comprise: providing a surface having a plurality of materials exposed thereon simultaneously, and exposing the surface to a vapor of a metal-containing film-forming composition that contains a precursor having the formula:LxM(-N(R)-(CR′2)n-NR″2)wherein M is a Group 12, Group 13, Group 14, Group 15, Group IV or Group V element; x+1 is the oxidation state of the M; L is an anionic ligand, independently selected from dialkylamine, alkoxy, alkylimine, bis(trialkylsilylamine), amidinate, betadiketonate, keto-imine, halide, or the like; R, R″ each are independently a C1-C10 linear, branched or cyclic alkyl, alkenyl, or trialkylsilyl group; R′ is H or a C1-C10 linear, branched or cyclic alkyl, alkenyl or trialkylsilyl group; n=1-4,wherein at least one of the materials is at least partially blocked by a blocking agent from the deposition of the metal-containing film through a vapor deposition process.