SELF-ADAPTIVE WEAR LEVELING METHOD AND ALGORITHM

A memory device is provided. The memory device comprises:a plurality of memory cells, each memory cell being programmable to at least two logic states, each logic state corresponding to a respective nominal electric resistance value of the memory cell, the plurality of memory cells comprising a first group of memory cells and a second group of memory cells, the memory cells of the second group being programmed to a predefined logic state of said at least two logic states;a memory controller coupled to the plurality of memory cells and configured to apply a reading voltage to at least one selected memory cell of the first group during a reading operation to assess the logic state thereof.The memory controller is further configured to:apply the reading voltage to the memory cells of the second group to assess the logic state thereof;if the logic state of at least one memory cell of the second group is assessed to be different from said predefined logic state, perform a refresh operation of the memory cells of the first group by applying thereto a recovery voltage higher than the reading voltage to assess the logic state thereof and then reprogramming the memory cells of the first group to the logic state assessed with the recovery voltage.