LOW DISHING COPPER CHEMICAL MECHANICAL PLANARIZATION

Copper chemical mechanical planarization (CMP) polishing formulation, method and system are disclosed. The CMP polishing formulation comprises abrasive particles of specific morphology and mean particle sizes (≤100 nm, ≤50 nm, ≤40 nm, ≤30 nm, or ≤20 nm), at least two or more amino acids, oxidizer, c...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	TSAI, Ming Shih, MATZ, Laura M, HUANG, Chen Yuan, LI, Keh-Yeuan, SHI, Xiaobo, YANG, Rung-Je
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Copper chemical mechanical planarization (CMP) polishing formulation, method and system are disclosed. The CMP polishing formulation comprises abrasive particles of specific morphology and mean particle sizes (≤100 nm, ≤50 nm, ≤40 nm, ≤30 nm, or ≤20 nm), at least two or more amino acids, oxidizer, corrosion inhibitor, and water.