DURABLE HYBRID HETEROSTRUCTURES AND METHODS FOR MANUFACTURING THE SAME

DURABLE HYBRID HETEROSTRUCTURES AND METHODS FOR MANUFACTURING THE SAME

A hybrid heterostructure includes a semiconductor layer comprising indium antimonide, a superconductor layer comprising aluminum, and a screening layer between the semiconductor layer and the superconductor layer, the screening layer comprising indium arsenide. By including a screening layer of indi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MANFRA, Michael James, THOMAS, Candice Fanny
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
CALCULATING
COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
COMPUTING
COUNTING
ELECTRICITY
PHYSICS
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Zusammenfassung:A hybrid heterostructure includes a semiconductor layer comprising indium antimonide, a superconductor layer comprising aluminum, and a screening layer between the semiconductor layer and the superconductor layer, the screening layer comprising indium arsenide. By including a screening layer of indium arsenide between the semiconductor layer of indium antimonide and the superconductor layer of aluminum, a high-performance and durable hybrid heterostructure suitable for use in quantum computing devices is provided.