METHOD AND DEVICE FOR LOCAL REMOVAL AND/OR MODIFICATION OF A POLYMER MATERIAL ON A SURFACE

A method for locally removing/modifying a polymer material on a surface of a wafer. The method includes: a) aligning a mask with respect to the surface; b) locally exposing the surface through the mask using a VUV light source while simultaneously supplying a gas mixture containing at least oxygen;...

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Bibliographische Detailangaben
Hauptverfasser:	BUTZ, Juergen, WILL, Barbara, KUHN, Timo, ZAMORA, Ricardo
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR MICROSTRUCTURAL TECHNOLOGY ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	A method for locally removing/modifying a polymer material on a surface of a wafer. The method includes: a) aligning a mask with respect to the surface; b) locally exposing the surface through the mask using a VUV light source while simultaneously supplying a gas mixture containing at least oxygen; c) purging the surface with a gas mixture containing at least nitrogen and oxygen, the VUV light source being switched off; and d) repeating at least steps b) and c) until the removal/modification is complete. A device is described for locally removing/modifying a polymer material on a surface of a wafer, including a mask. The device includes an adjustable wafer table for holding the wafer, and is configured to set an exposure gap between the wafer and the mask in a first operating state, and to set a purge gap between the wafer and the mask in a second operating state.