SEMICONDUCTOR DEVICES HAVING HYBRID GATE OR DIFFUSION BREAKS, AND METHOD OF MANUFACTURING THE SAME

Presented are structures and methods for forming such structures that allow for electrical or diffusion breaks between transistors of one level (101) of a stacked transistor device, without necessarily requiring that a like electrical or diffusion break exists in another level (102) of the stacked t...

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Bibliographische Detailangaben

Hauptverfasser:	SONG, Seunghyun, SEO, Kangill, HONG, Byounghak, HA, Daewon, MARTINEAU, Jason
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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