SEMICONDUCTOR DEVICES HAVING HYBRID GATE OR DIFFUSION BREAKS, AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICES HAVING HYBRID GATE OR DIFFUSION BREAKS, AND METHOD OF MANUFACTURING THE SAME

Presented are structures and methods for forming such structures that allow for electrical or diffusion breaks between transistors of one level (101) of a stacked transistor device, without necessarily requiring that a like electrical or diffusion break exists in another level (102) of the stacked t...

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Bibliographische Detailangaben
Hauptverfasser: SONG, Seunghyun, SEO, Kangill, HONG, Byounghak, HA, Daewon, MARTINEAU, Jason
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Presented are structures and methods for forming such structures that allow for electrical or diffusion breaks between transistors of one level (101) of a stacked transistor device, without necessarily requiring that a like electrical or diffusion break exists in another level (102) of the stacked transistor device. Also presented, an electrical break between transistor devices may be formed by providing a channel of a first polarity with a false gate comprising a work-function metal of an opposite polarity.