MOLDED CIRCUIT COMPONENT AND ELECTRONIC DEVICE

Provided is a molded circuit component 300 in which a metal layer 200 is formed with high adhesion by giving a degree of freedom to a base material 100. In the molded circuit component 300 in which the metal layer 200 is formed in a processing region 110 in the base material 100, a plurality of rece...

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Bibliographische Detailangaben
1. Verfasser:	IDO, Takanori
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY PRINTED CIRCUITS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Provided is a molded circuit component 300 in which a metal layer 200 is formed with high adhesion by giving a degree of freedom to a base material 100. In the molded circuit component 300 in which the metal layer 200 is formed in a processing region 110 in the base material 100, a plurality of recesses 120 each having a plurality of holes 130 are continuously formed in the processing region 110, the processing region 110 has a ratio of a width to a maximum depth with respect to a surface of the base material 100 of 10:1 to 6:1, the processing region 110 is formed to have a width in a range of 20 µm to 200 µm, and formed to have a maximum depth with respect to the surface of the base material 100 in a range of 2 µm to 30 µm, the metal layer 200 can be formed in the processing region 110 by laminating using a plating method, and a catalyst that reacts with a metal that forms the metal layer 200 at the time of the lamination is attached to the holes 130 and the recesses 120.