TMR SENSOR WITH MAGNETIC TUNNEL JUNCTIONS WITH A FREE LAYER HAVING AN INTRINSIC ANISOTROPY

TMR SENSOR WITH MAGNETIC TUNNEL JUNCTIONS WITH A FREE LAYER HAVING AN INTRINSIC ANISOTROPY

Embodiments of the present disclosure generally relate to a large field range TMR sensor of magnetic tunnel junctions (MTJs) with a free layer having an intrinsic anisotropy. In one embodiment, a tunnel magnetoresistive (TMR) based magnetic sensor in a Wheatstone configuration includes at least one...

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Hauptverfasser: KAISER, Christian, ZELTSER, Alexander M, BAIAO DE ALBUQUERQUE, Goncalo, MAURI, Daniele, ZHENG, Yuankai
Format: Patent
Sprache:eng ; fre ; ger
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MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
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creator KAISER, Christian
ZELTSER, Alexander M
BAIAO DE ALBUQUERQUE, Goncalo
MAURI, Daniele
ZHENG, Yuankai
description Embodiments of the present disclosure generally relate to a large field range TMR sensor of magnetic tunnel junctions (MTJs) with a free layer having an intrinsic anisotropy. In one embodiment, a tunnel magnetoresistive (TMR) based magnetic sensor in a Wheatstone configuration includes at least one MTJ. The MTJ includes a free layer having an intrinsic anisotropy produced by deposition at a high oblique angle from normal. Magnetic domain formations within the free layer can be further controlled by a pinned layer canted at an angle to the intrinsic anisotropy of the free layer, by a hard bias element, by shape anisotropy, or combinations thereof.
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subjects MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
title TMR SENSOR WITH MAGNETIC TUNNEL JUNCTIONS WITH A FREE LAYER HAVING AN INTRINSIC ANISOTROPY
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