TMR SENSOR WITH MAGNETIC TUNNEL JUNCTIONS WITH A FREE LAYER HAVING AN INTRINSIC ANISOTROPY

Embodiments of the present disclosure generally relate to a large field range TMR sensor of magnetic tunnel junctions (MTJs) with a free layer having an intrinsic anisotropy. In one embodiment, a tunnel magnetoresistive (TMR) based magnetic sensor in a Wheatstone configuration includes at least one...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	KAISER, Christian, ZELTSER, Alexander M, BAIAO DE ALBUQUERQUE, Goncalo, MAURI, Daniele, ZHENG, Yuankai
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Embodiments of the present disclosure generally relate to a large field range TMR sensor of magnetic tunnel junctions (MTJs) with a free layer having an intrinsic anisotropy. In one embodiment, a tunnel magnetoresistive (TMR) based magnetic sensor in a Wheatstone configuration includes at least one MTJ. The MTJ includes a free layer having an intrinsic anisotropy produced by deposition at a high oblique angle from normal. Magnetic domain formations within the free layer can be further controlled by a pinned layer canted at an angle to the intrinsic anisotropy of the free layer, by a hard bias element, by shape anisotropy, or combinations thereof.