METAL LINES PATTERNED BY BOTTOM-UP FILL METALLIZATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

METAL LINES PATTERNED BY BOTTOM-UP FILL METALLIZATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

Embodiments of the disclosure are in the field of integrated circuit structure fabrication. In an example, an integrated circuit structure includes a plurality of conductive interconnect lines above a substrate, individual ones of the conductive interconnect lines having a top and sidewalls. An etch...

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Bibliographische Detailangaben
Hauptverfasser: CHEBIAM, Ramanan V, KOBRINSKY, Mauro, LIN, Kevin Lai, CARVER, Colin T
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Embodiments of the disclosure are in the field of integrated circuit structure fabrication. In an example, an integrated circuit structure includes a plurality of conductive interconnect lines above a substrate, individual ones of the conductive interconnect lines having a top and sidewalls. An etch stop layer is on the top and along an entirety of the sidewalls of the individual ones of the conductive interconnect lines.