IMPROVED STRUCTURE FOR RF SUBSTRATE AND MANUFACTURING METHOD

Producing a semiconductor or piezoelectric on-insulator type substrate for RF applications which is provided with a porous layer under the BOX layer and under a layer of polycrystalline semiconductor material.

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Hauptverfasser: AUGENDRE, Emmanuel, ROLLAND, Emmanuel, REBOH, Shay, ACOSTA ALBA, Pablo, LORNE, Thomas
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Sprache:eng ; fre ; ger
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creator AUGENDRE, Emmanuel
ROLLAND, Emmanuel
REBOH, Shay
ACOSTA ALBA, Pablo
LORNE, Thomas
description Producing a semiconductor or piezoelectric on-insulator type substrate for RF applications which is provided with a porous layer under the BOX layer and under a layer of polycrystalline semiconductor material.
format Patent
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language eng ; fre ; ger
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subjects BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
SEMICONDUCTOR DEVICES
title IMPROVED STRUCTURE FOR RF SUBSTRATE AND MANUFACTURING METHOD
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