IMPROVED STRUCTURE FOR RF SUBSTRATE AND MANUFACTURING METHOD

Producing a semiconductor or piezoelectric on-insulator type substrate for RF applications which is provided with a porous layer under the BOX layer and under a layer of polycrystalline semiconductor material.

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Bibliographische Detailangaben
Hauptverfasser:	AUGENDRE, Emmanuel, ROLLAND, Emmanuel, REBOH, Shay, ACOSTA ALBA, Pablo, LORNE, Thomas
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Producing a semiconductor or piezoelectric on-insulator type substrate for RF applications which is provided with a porous layer under the BOX layer and under a layer of polycrystalline semiconductor material.