LARGE-GRAIN TIN SPUTTERING TARGET

The present disclosure relates generally to a planar sputtering target. In particular, the present disclosure provides a planar sputtering target comprising a planar sputtering surface and a back surface opposite the planar sputtering surface. The planar sputtering target is formed from a 2N purity...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	ALFORD, Frank C, UNDERWOOD, Patrick K, RUGGIERO, Marc D, STROTHERS, Susan D, FERRASSE, Stephane
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CASTING CASTING OF METALS CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS POWDER METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The present disclosure relates generally to a planar sputtering target. In particular, the present disclosure provides a planar sputtering target comprising a planar sputtering surface and a back surface opposite the planar sputtering surface. The planar sputtering target is formed from a 2N purity tin having an average grain size from at least 10 mm to at most 100 mm. The present disclosure provides a method of manufacturing the tin planar sputtering target having an average grain size from at least 10 mm to at most 100 mm.