MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE DEVICE
Provided is a magneto-resistance effect element formed by sequentially laminating a ferromagnetic fixing layer, a ferromagnetic free layer, and a protective layer, which is capable of efficiently detecting the magnetic field above the magneto-resistance effect element without deteriorating the funct...
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| Hauptverfasser: | , |
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | Provided is a magneto-resistance effect element formed by sequentially laminating a ferromagnetic fixing layer, a ferromagnetic free layer, and a protective layer, which is capable of efficiently detecting the magnetic field above the magneto-resistance effect element without deteriorating the function as the magnetic sensor. The GMR laminated film for the magneto-resistance effect element includes the ferromagnetic free layer, and the protective layer formed on the ferromagnetic free layer to be protected from oxidation. The protective layer is formed as an oxide antiferromagnetic substance, and has its film thickness of 10 nm or smaller. |
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