PRODUCTION METHOD FOR POLYCRYSTALLINE SILICON

The present invention reduces a variation in thickness of polycrystalline silicon rods to be formed. A method for producing a polycrystalline silicon rod (13), the method involving growing polycrystalline silicon by passing electric currents through silicon core wires (7) in a bell jar (5) in which...

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1. Verfasser: SAKAI, Junya
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:The present invention reduces a variation in thickness of polycrystalline silicon rods to be formed. A method for producing a polycrystalline silicon rod (13), the method involving growing polycrystalline silicon by passing electric currents through silicon core wires (7) in a bell jar (5) in which the silicon core wires (7) are arranged on a plurality of concentric circles, is configured such that values of the electric currents to be passed through the silicon core wires are controlled so that an electric current to be passed through a silicon core wire (7) arranged on a first concentric circle of the plurality of concentric circles has a greater value than an electric current to be passed through a silicon core wire (7) arranged on a second concentric circle of the plurality of concentric circles, the second concentric circle being located inward of the first concentric circle.