MULTI-ETCH DETECTOR PIXELS FABRICATION AND ASSOCIATED IMAGING SYSTEMS AND METHODS

Techniques are disclosed for facilitating multi-etch detector pixels fabrication. In one example, a method includes forming a semiconductor structure. The semiconductor structure includes a substrate layer, an absorber layer disposed on the substrate layer, a barrier layer disposed on the absorber layer, and a first contact layer disposed on the barrier layer. The method further includes forming the pixels from the semiconductor structure. The forming of the pixels includes performing a first etching operation to remove a portion of at least the first contact layer, and performing a second etching operation to remove a portion of the barrier layer and a portion of the absorber layer. Each of the pixels includes a respective portion of each of the substrate layer, the first contact layer, the barrier layer, and the absorber layer. Related systems and devices are also provided.