METHOD FOR ETCHING AN IGZO STRUCTURE

The present disclosure relates to a method for etching an indium gallium zinc oxide (IGZO) structure. The method comprises exposing the IGZO structure to a reactant flow comprising a hydrocarbon-based reactant. Thereby, a reactant layer is formed on the IGZO structure. Further, the method comprises exposing the reactant layer formed on the IGZO structure to an argon flow. Thereby, one or more reactant molecules are removed from the reactant layer. The one or more reactant molecules, which are removed from the reactant layer formed on the IGZO structure, are removed together with one or more IGZO molecules, thus leading to an etching of the IGZO structure.