IMAGING ELEMENT AND IMAGING DEVICE

Leakage of incident light to a charge holding part is reduced in a back surface irradiation type imaging element.The imaging element includes a photoelectric conversion part, a reflection part, and a reflection part formation member. The photoelectric conversion part is formed in a semiconductor sub...

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Bibliographische Detailangaben
Hauptverfasser:	MASAGAKI Atsushi, KUNITAKE Sachihito, NOUDO Shinichiro
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Leakage of incident light to a charge holding part is reduced in a back surface irradiation type imaging element.The imaging element includes a photoelectric conversion part, a reflection part, and a reflection part formation member. The photoelectric conversion part is formed in a semiconductor substrate and performs photoelectric conversion of incident light. The reflection part is disposed in a front surface of the semiconductor substrate, which is different from a surface on which the incident light is incident, to reflect transmitted light transmitted through the photoelectric conversion part to the photoelectric conversion part. The reflection part formation member has a bottom surface disposed adjacent to the front surface of the semiconductor substrate and a side on which the reflection part is formed.