GERMANIUM SINGLE-CRYSTAL WAFER, METHOD FOR PREPARING GERMANIUM SINGLE-CRYSTAL WAFER, METHOD FOR PREPARING CRYSTAL BAR, AND USE OF SINGLE-CRYSTAL WAFER

GERMANIUM SINGLE-CRYSTAL WAFER, METHOD FOR PREPARING GERMANIUM SINGLE-CRYSTAL WAFER, METHOD FOR PREPARING CRYSTAL BAR, AND USE OF SINGLE-CRYSTAL WAFER

A germanium single-crystal wafer comprises silicon with an atomic concentration of from 3×1014 atoms/cc to 10×1018 atoms/cc, boron with an atomic concentration of from 1×1016 atoms/cc to 10×1018 atoms/cc, and gallium with an atomic concentration of from 1×1016 atoms/cc to 10×1019 atoms/cc. Further p...

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Bibliographische Detailangaben
Hauptverfasser: ZHOU, Yvonne, WANG, Yuanli, CHU, Sung-Nee George, LIU, Weiguo, SHETTY, Rajaram
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:A germanium single-crystal wafer comprises silicon with an atomic concentration of from 3×1014 atoms/cc to 10×1018 atoms/cc, boron with an atomic concentration of from 1×1016 atoms/cc to 10×1018 atoms/cc, and gallium with an atomic concentration of from 1×1016 atoms/cc to 10×1019 atoms/cc. Further provided are a method for preparing the germanium single-crystal wafer, a method for preparing a germanium single-crystal ingot, and the use of the germanium single-crystal wafer for increasing the open-circuit voltage of a solar cell. The germanium single-crystal wafer has an improved electrical property in that it has a smaller difference in resistivity and carrier concentration.