SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME

Provided is a method for manufacturing a semiconductor structure. The method comprises: providing a substrate, wherein a trench is provided in the substrate; forming a first conductive layer in the trench, wherein the top of the first conductive layer is lower than the top of the trench; forming a d...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ZHOU, Zhen, PING, Er-Xuan
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Provided is a method for manufacturing a semiconductor structure. The method comprises: providing a substrate, wherein a trench is provided in the substrate; forming a first conductive layer in the trench, wherein the top of the first conductive layer is lower than the top of the trench; forming a dielectric layer on the first conductive layer; and forming a second conductive layer on the dielectric layer.