METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT INVOLVING PERFORMING AN ELECTROSTATIC DISCHARGE TEST
In a method of manufacturing an integrated circuit involving performing an electrostatic discharge, ESD, test, a weak frequency band is detected by sequentially radiating a plurality of first electromagnetic waves on a first test board (200) including the integrated circuit. First peak-to-peak volta...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre ; ger |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | KANG, Bonggyu JANG, Youngsoo KIM, Heesu |
| description | In a method of manufacturing an integrated circuit involving performing an electrostatic discharge, ESD, test, a weak frequency band is detected by sequentially radiating a plurality of first electromagnetic waves on a first test board (200) including the integrated circuit. First peak-to-peak voltage signals are detected by sequentially radiating the plurality of first electromagnetic waves on a second test board (201) including an electromagnetic wave receiving module (230). A frequency spectrum is detected by radiating a second electromagnetic wave on a housing (250) including a third test board (203) including the electromagnetic wave receiving module (230). A second peak-to-peak voltage signal is generated based on the weak frequency band, the first peak-to-peak voltage signals and the frequency spectrum. An ESD characteristic associated with an electronic system including the integrated circuit is predicted based on the second peak-to-peak voltage signal. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP3971591A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP3971591A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP3971591A13</originalsourceid><addsrcrecordid>eNqNisEKgkAQQPfSIap_mB_osEiEx2Gc1QXdlXH0KhrbKUqw_6cCP6DTg_fe3swNaxULiA4aDL1D0l58KAED-KBcCioXQF6o9_pVQ6yHX29ZXJRmW7lmUomdonqCwndUoZQMyp0eze4-PdZ02ngw4FipOqflNaZ1mW7pmd4jt1l-tZfcos3-WD6mrTPu</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT INVOLVING PERFORMING AN ELECTROSTATIC DISCHARGE TEST</title><source>esp@cenet</source><creator>KANG, Bonggyu ; JANG, Youngsoo ; KIM, Heesu</creator><creatorcontrib>KANG, Bonggyu ; JANG, Youngsoo ; KIM, Heesu</creatorcontrib><description>In a method of manufacturing an integrated circuit involving performing an electrostatic discharge, ESD, test, a weak frequency band is detected by sequentially radiating a plurality of first electromagnetic waves on a first test board (200) including the integrated circuit. First peak-to-peak voltage signals are detected by sequentially radiating the plurality of first electromagnetic waves on a second test board (201) including an electromagnetic wave receiving module (230). A frequency spectrum is detected by radiating a second electromagnetic wave on a housing (250) including a third test board (203) including the electromagnetic wave receiving module (230). A second peak-to-peak voltage signal is generated based on the weak frequency band, the first peak-to-peak voltage signals and the frequency spectrum. An ESD characteristic associated with an electronic system including the integrated circuit is predicted based on the second peak-to-peak voltage signal.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220323&DB=EPODOC&CC=EP&NR=3971591A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220323&DB=EPODOC&CC=EP&NR=3971591A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KANG, Bonggyu</creatorcontrib><creatorcontrib>JANG, Youngsoo</creatorcontrib><creatorcontrib>KIM, Heesu</creatorcontrib><title>METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT INVOLVING PERFORMING AN ELECTROSTATIC DISCHARGE TEST</title><description>In a method of manufacturing an integrated circuit involving performing an electrostatic discharge, ESD, test, a weak frequency band is detected by sequentially radiating a plurality of first electromagnetic waves on a first test board (200) including the integrated circuit. First peak-to-peak voltage signals are detected by sequentially radiating the plurality of first electromagnetic waves on a second test board (201) including an electromagnetic wave receiving module (230). A frequency spectrum is detected by radiating a second electromagnetic wave on a housing (250) including a third test board (203) including the electromagnetic wave receiving module (230). A second peak-to-peak voltage signal is generated based on the weak frequency band, the first peak-to-peak voltage signals and the frequency spectrum. An ESD characteristic associated with an electronic system including the integrated circuit is predicted based on the second peak-to-peak voltage signal.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNisEKgkAQQPfSIap_mB_osEiEx2Gc1QXdlXH0KhrbKUqw_6cCP6DTg_fe3swNaxULiA4aDL1D0l58KAED-KBcCioXQF6o9_pVQ6yHX29ZXJRmW7lmUomdonqCwndUoZQMyp0eze4-PdZ02ngw4FipOqflNaZ1mW7pmd4jt1l-tZfcos3-WD6mrTPu</recordid><startdate>20220323</startdate><enddate>20220323</enddate><creator>KANG, Bonggyu</creator><creator>JANG, Youngsoo</creator><creator>KIM, Heesu</creator><scope>EVB</scope></search><sort><creationdate>20220323</creationdate><title>METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT INVOLVING PERFORMING AN ELECTROSTATIC DISCHARGE TEST</title><author>KANG, Bonggyu ; JANG, Youngsoo ; KIM, Heesu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP3971591A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>KANG, Bonggyu</creatorcontrib><creatorcontrib>JANG, Youngsoo</creatorcontrib><creatorcontrib>KIM, Heesu</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KANG, Bonggyu</au><au>JANG, Youngsoo</au><au>KIM, Heesu</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT INVOLVING PERFORMING AN ELECTROSTATIC DISCHARGE TEST</title><date>2022-03-23</date><risdate>2022</risdate><abstract>In a method of manufacturing an integrated circuit involving performing an electrostatic discharge, ESD, test, a weak frequency band is detected by sequentially radiating a plurality of first electromagnetic waves on a first test board (200) including the integrated circuit. First peak-to-peak voltage signals are detected by sequentially radiating the plurality of first electromagnetic waves on a second test board (201) including an electromagnetic wave receiving module (230). A frequency spectrum is detected by radiating a second electromagnetic wave on a housing (250) including a third test board (203) including the electromagnetic wave receiving module (230). A second peak-to-peak voltage signal is generated based on the weak frequency band, the first peak-to-peak voltage signals and the frequency spectrum. An ESD characteristic associated with an electronic system including the integrated circuit is predicted based on the second peak-to-peak voltage signal.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; fre ; ger |
| recordid | cdi_epo_espacenet_EP3971591A1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT INVOLVING PERFORMING AN ELECTROSTATIC DISCHARGE TEST |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T21%3A56%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KANG,%20Bonggyu&rft.date=2022-03-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP3971591A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |