SEMICONDUCTOR DEVICES WITH LOW PARASITIC CAPACITANCE

SEMICONDUCTOR DEVICES WITH LOW PARASITIC CAPACITANCE

A semiconductor device with low parasitic capacitance comprises a substrate. The semiconductor device also comprises a gate region on the substrate. The semiconductor device further comprises a contact region on the substrate, wherein the contact region comprises a first portion and a second portion...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YANG, Haining, BAO, Junjing
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device with low parasitic capacitance comprises a substrate. The semiconductor device also comprises a gate region on the substrate. The semiconductor device further comprises a contact region on the substrate, wherein the contact region comprises a first portion and a second portion, wherein the first portion is in contact with the substrate and has a first surface above the substrate, and wherein the second portion is in contact with the substrate and has a second surface above the substrate different from the first surface.