MANUFACTURING METHOD OF AN ELEMENT OF AN ELECTRONIC DEVICE HAVING IMPROVED RELIABILITY, AND RELATED ELEMENT, ELECTRONIC DEVICE AND ELECTRONIC APPARATUS

A manufacturing method of an anchorage element (82) of a passivation layer (69), comprising: forming, in a semiconductor body (80) made of SiC and at a distance from a top surface (52a) of the semiconductor body (80), a first implanted region (84) having, along a first axis (X), a first maximum dimension (di); forming, in the semiconductor body (80), a second implanted region (85), which is superimposed to the first implanted region (84) and has, along the first axis (X), a second maximum dimension (d2) smaller than the first maximum dimension (di); carrying out a process of thermal oxidation of the first implanted region (84) and second implanted region (85) to form an oxidized region (86'); removing said oxidized region (86') to form a cavity (83); and forming, on the top surface (52a), the passivation layer (69) protruding into the cavity (83) to form said anchorage element (82) fixing the passivation layer (69) to the semiconductor body (80).