METHOD FOR DEPOSITING A SILICON GERMANIUM LAYER ON A SUBSTRATE

A method for heteroepitaxially depositing a silicon germanium layer (3) on a substrate (1), comprising:providing a mask layer (4) atop the substrate (1);removing an outer section of the mask layer (4) to provide access to an annular-shaped free surface (6) of the substrate in an edge region of the substrate surrounding a remainder (5) of the mask layer (4);depositing a cylindrical silicon germanium layer (2) atop the annular-shaped free surface (6) of the substrate;removing the remainder of the mask layer; anddepositing the silicon germanium layer (3) atop the substrate (1) and atop the cylindrical silicon germanium layer (2), the silicon germanium layer (3) contacting an inner lateral surface of the cylindrical silicon germanium layer (2).