ASSEMBLIES WHICH INCLUDE WORDLINES HAVING A FIRST METAL-CONTAINING MATERIAL AT LEAST PARTIALLY SURROUNDING A SECOND METAL-CONTAINING MATERIAL AND HAVING DIFFERENT CRYSTALLINITY THAN THE SECOND METAL-CONTAINING MATERIAL

Some embodiments include a memory array having a vertical stack of alternating insulative levels and wordline levels. Channel material extends vertically along the stack. The wordline levels include conductive regions which have a first metal-containing material and a second metal-containing materia...

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Bibliographische Detailangaben
Hauptverfasser:	GREENLEE, Jordan, D, MCTEER, Everett, A, MELDRIM, John, Mark, KLEIN, Rita, J
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	Some embodiments include a memory array having a vertical stack of alternating insulative levels and wordline levels. Channel material extends vertically along the stack. The wordline levels include conductive regions which have a first metal-containing material and a second metal-containing material. The first metal-containing material at least partially surrounds the second metal-containing material. The first metal-containing material has a different crystallinity than the second metal-containing material. In some embodiments the first metal-containing material is substantially amorphous, and the second metal-containing material has a mean grain size within a range of from greater than or equal to about 5 nm to less than or equal to about 200 nm. Charge-storage regions are adjacent the wordline levels. Charge-blocking regions are between the charge-storage regions and the conductive regions.