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Methods and apparatus for etching a high aspect ratio feature in a stack on a substrate are provided. The feature may be formed in the process of forming a 3D NAND device. Typically, the stack includes alternating layers of material such as silicon oxide and silicon nitride or silicon oxide and poly...

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Bibliographische Detailangaben
Hauptverfasser:	LIPOVSKY, James M, HASSO, Douglas J, GUO, Yinzhong, CYGAN, Ludwik S, JACOBS, Joseph, ESCOBAR MARIN, Carlos A
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE ADHESIVES AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G CHEMISTRY COMPOSITIONS BASED THEREON DYES GENERAL PROCESSES OF COMPOUNDING METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL ORGANIC MACROMOLECULAR COMPOUNDS PAINTS POLISHES THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF MATERIALS AS ADHESIVES WORKING-UP
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