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Methods and apparatus for etching a high aspect ratio feature in a stack on a substrate are provided. The feature may be formed in the process of forming a 3D NAND device. Typically, the stack includes alternating layers of material such as silicon oxide and silicon nitride or silicon oxide and poly...

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Bibliographische Detailangaben
Hauptverfasser:	LIPOVSKY, James M, HASSO, Douglas J, GUO, Yinzhong, CYGAN, Ludwik S, JACOBS, Joseph, ESCOBAR MARIN, Carlos A
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE ADHESIVES AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G CHEMISTRY COMPOSITIONS BASED THEREON DYES GENERAL PROCESSES OF COMPOUNDING METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL ORGANIC MACROMOLECULAR COMPOUNDS PAINTS POLISHES THEIR PREPARATION OR CHEMICAL WORKING-UP USE OF MATERIALS AS ADHESIVES WORKING-UP
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Beschreibung
Zusammenfassung:	Methods and apparatus for etching a high aspect ratio feature in a stack on a substrate are provided. The feature may be formed in the process of forming a 3D NAND device. Typically, the stack includes alternating layers of material such as silicon oxide and silicon nitride or silicon oxide and polysilicon. WF6 is provided in the etch chemistry, which substantially reduces or eliminates problematic sidewall notching. Advantageously, this improvement in sidewall notching does not introduce other tradeoffs such as increased bowing, decreased selectivity, increased capping, or decreased etch rate.