METHOD FOR PRODUCING A SUPERJUNCTION DEVICE

Disclosed is a method for producing a semiconductor device, the method including forming a plurality of semiconductor arrangements one above the other, wherein forming each of the plurality of semiconductor arrangements comprises forming a semiconductor layer (100i, 100i+1), forming a plurality of trenches (12i, 12i+1) in a first surface (11i, 11i+1) of the semiconductor layer (100i, 100i+1), and implanting dopant atoms of at least one of a first type and a second type into at least one of a first sidewall (14i, 14i+1) and a second sidewall (15i, 15i+1) of each of the plurality of trenches (12i, 12i+1). Forming of at least one of the plurality of semiconductor arrangements further comprises forming a protective layer (16i, 16i+1) covering mesa regions (13i) between the plurality of trenches (12i, 12i+1) of the respective semiconductor layer (100i, 100i+1), and covering the bottoms, the first sidewalls (14i, 14i+1) and the second sidewalls (15i, 15i+1) of each of the plurality of trenches (12i, 12i+1) that are formed in the respective semiconductor layer (100i, 100i+1).