BACKSIDE INCIDENT-TYPE IMAGING ELEMENT

A backside incident-type imaging element includes a semiconductor substrate having a front surface and a back surface on an opposite side from the front surface, a ground potential being applied to the semiconductor substrate, and a semiconductor layer formed on the front surface, in which the semiconductor layer has a first element part that includes a light receiving portion generating a signal charge according to incident light from a side of the back surface and outputs a signal voltage corresponding to the signal charge, and a second element part that includes an analog-digital converter converting the signal voltage output from the first element part into a digital signal, and a thickness of the semiconductor substrate in a first direction intersecting the front surface and the back surface is relatively thicker in a second region of the semiconductor substrate corresponding to the analog-digital converter when viewed in the first direction than in a first region of the semiconductor substrate corresponding to the light receiving portion when viewed in the first direction.