SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE USING SAME, AND DRIVING METHOD FOR SEMICONDUCTOR DEVICE

In order to provide a semiconductor device that has low loss performance and that enables stable dvCE/dt switching with respect to temperature and conduction conditions, this semiconductor device is composed of a dual-gate IGBT having a first gate terminal and a second gate terminal. During transiti...

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Bibliographische Detailangaben
Hauptverfasser: MIYOSHI, Tomoyuki, SUZUKI, Hiroshi, TAKEUCHI, Yujiro, SHIRAISHI, Masaki, FURUKAWA, Tomoyasu
Format: Patent
Sprache:eng ; fre ; ger
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